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وبلاگ شرکت در مورد Infineon IPW60R041C6: A Non-Automotive CoolMOS™ C6 N-Channel Power MOSFET

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شرکت وبلاگ
Infineon IPW60R041C6: A Non-Automotive CoolMOS™ C6 N-Channel Power MOSFET
آخرین اخبار شرکت Infineon IPW60R041C6: A Non-Automotive CoolMOS™ C6 N-Channel Power MOSFET

Shenzhen Mingjiada Electronics Co., Ltd. is a long-term supplier of the Infineon IPW60R041C6, a non-automotive-grade CoolMOS™ C6 N-channel power MOSFET rated at 600 V, with an RDS (on) of 41 mOhm at 10 V and a current rating of 77.5 A at 25°C.

 

Product Overview:

The IPW60R041C6 is a 600 V N-channel superjunction power MOSFET from Infineon’s CoolMOS™ C6 series, housed in a TO-247-3 through-hole package. Based on Infineon’s leading superjunction technology, this device achieves an extremely low on-resistance of just 41 mΩ (@ 44.4 A, 10 V) at the 600 V voltage rating, while offering fast switching capabilities and excellent EMI performance.

 

Unlike automotive-grade (AEC-Q101-certified) products, the IPW60R041C6 is designed for industrial and consumer applications, with an operating junction temperature range of –55°C to +150°C. It is suitable for applications such as server power supplies, telecommunications power supplies, and adapters that demand high efficiency and power density.

 

Key Technical Specifications of the IPW60R041C6:

Manufacturer: Infineon Technologies

Series: CoolMOS™ C6

FET Type: N-channel, metal-oxide

Technology: Superjunction (SJ)

Drain-Source Voltage (Vdss): 600 V

Continuous Drain Current (Id): 77.5 A (Tc = 25°C)

On-resistance Rds(on) (Max): 41 mΩ @ 44.4 A, 10 V

Gate threshold voltage Vgs(th): 3.5 V @ 2.96 mA (Max)

Gate charge Qg (Max): 290 nC @ 10 V

Input capacitance Ciss (Max): 6,530 pF @ 10 V

Maximum gate-source voltage Vgs: ±20 V

Maximum power dissipation: 481 W (Tc)

Operating junction temperature range: –55°C to +150°C (TJ)

Mounting type: Through-hole

Package/Housing: TO-247-3 (PG-TO247-3-1)

Drive Voltage: 10 V

 

Technical Features:

1. Ultra-low on-resistance

A maximum on-resistance of 41 mΩ is among the lowest in the 600 V-class super-junction MOSFETs. The low Rds(on) significantly reduces on-resistance losses in high-current applications, directly improving overall system efficiency.

2. Excellent Switching Performance

Gate charge (Qg) is only 290 nC, and input capacitance (Ciss) is 6,530 pF. Combined with the fast switching characteristics of CoolMOS™ C6, this helps minimize switching losses and allows for the use of smaller transformers and capacitors, thereby reducing BOM costs. The device achieves inherent active re-turn-on during the current interruption phase after the body diode turns on, which is particularly advantageous for twin-transistor forward (TTF) and interleaved parallel TTF topologies.

3. Superjunction Technology

Designed based on the superjunction principle, it achieves lower on-resistance and a better switching figure of merit (FOM) than traditional planar MOSFETs at the same voltage rating, making it an ideal choice for high-voltage, high-efficiency power conversion.

4. High Power Dissipation Capability

With a maximum power dissipation of 481 W (Tc), combined with the excellent thermal performance of the TO-247 package, it can withstand the thermal loads of high-current, high-power applications.

5. Wide Operating Junction Temperature Range

A junction temperature range of –55°C to +150°C makes it suitable for the demanding operating environments of industrial-grade and telecommunications-grade equipment.

 

Typical Applications:

Server and Telecommunications Power Supplies

The IPW60R041C6 is widely used as the main switch in AC-DC PFC (Power Factor Correction) circuits and LLC resonant converters for server power supplies. Thanks to its low on-state losses and excellent switching performance, it significantly improves efficiency at both full and light loads, meeting stringent energy efficiency standards such as 80 PLUS Titanium. In a teardown of the xFUSION UltraFusion 2000W Platinum-rated server power supply, the PFC section utilized the Infineon IPW60R041C6 as the switching device, paired with a silicon carbide diode to achieve highly efficient power factor correction.

 

Switched-Mode Power Supplies (SMPS) and Adapters

Suitable for both hard-switching PWM stages and resonant switching PWM stages, typical end products include PC Silverbox units, laptop adapters, and power supplies for LCD and PDP televisions.

 

Lighting and UPS

In high-efficiency lighting drivers and UPS (uninterruptible power supply) systems, this device can also serve as the main switching device, balancing efficiency and reliability.

 

PV Inverters and Energy Storage Systems

CoolMOS™ C6 technology is also suitable for high-voltage switching applications in PV inverters and energy storage systems, helping to improve energy conversion efficiency.

 

Quotation and Purchasing Information: Please submit an online inquiry via the Mingjiada website (www.integrated-ic.com) or contact our sales team to obtain the latest inventory and pricing information for the IPW60R041C6.

میخانه زمان : 2026-10-07 10:48:02 >> لیست اخبار
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