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وبلاگ شرکت در مورد Infineon IMZ120R045M1 CoolSiC™ 1200V 45mΩ SiC Trench MOSFET Transistor

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شرکت وبلاگ
Infineon IMZ120R045M1 CoolSiC™ 1200V 45mΩ SiC Trench MOSFET Transistor
آخرین اخبار شرکت Infineon IMZ120R045M1 CoolSiC™ 1200V 45mΩ SiC Trench MOSFET Transistor

Shenzhen Mingjiada Electronics Co., Ltd. supplies the Infineon IMZ120R045M1 CoolSiC™ 1200V 45mΩ silicon carbide (SiC) trench MOSFET.

 

The IMZ120R045M1 is part of Infineon’s CoolSiC™ G1 generation of grooved silicon carbide N-channel MOSFETs. It is housed in a TO247-4 four-pin package, features a 1200V breakdown voltage and a typical on-resistance of 45mΩ at 25°C, and is a classic discrete SiC device designed for medium- to high-voltage power conversion. Based on the trench SiC process, it significantly optimises gate charge and switching losses. It incorporates a high-performance bulk diode, eliminating reverse recovery issues, and is suitable for high-frequency, high-efficiency power topologies.

 

I. IMZ120R045M1 Product Details
1. Key Electrical Parameters of the IMZ120R045M1
- Device type: N-channel trench SiC MOSFET
- Blocking voltage VDS: 1200 V
- On-resistance RDS(on): 45 mΩ (Tj = 25 °C, VGS = 15 V)
- Continuous drain current ID: 52 A (25 °C)
- Total power dissipation Ptot: 228 W (25 °C)
- Maximum junction temperature Tj: 175 °C
- Total gate charge QG: 52 nC (typical @ VGS = 15 V); gate-drain charge Qgd: 13 nC
- Input capacitance Ciss: 1900 pF; output capacitance Coss: 115 pF
- Thermal resistance RthJC: 0.66 K/W; RthJA: 62 K/W
- Gate threshold voltage VGS(th) > 4 V; supports reliable turn-off at 0 V; wide gate voltage operating window; strong resistance to false turn-on
- Package: TO-247-4 (Kelvin source pin, independently driven source, reducing lead inductance and improving high-speed switching oscillation)
- Compliance: Lead-free, RoHS-compliant, supplied in TUBE packaging

 

2. IMZ120R045M1 Process and Core Technology Highlights
1. Trench CoolSiC™ architecture: Compared to planar SiC MOSFETs, the trench structure achieves lower Rds(on) and superior on-state loss for the same chip area; switching losses are minimally affected by temperature, offering significant efficiency advantages under high-temperature operating conditions.
2. Integrated low-loss body diode: The body diode has no reverse recovery charge, eliminating the need for an external freewheeling diode, simplifying half-bridge and full-bridge topology designs, and reducing BOM costs and loop parasitic inductance.
3. Kelvin source (TO247-4): The drive circuit is separated from the power source circuit, eliminating voltage disturbances on the source lead caused by power current, suppressing high-frequency switching spikes and reducing EMI, making it suitable for high-frequency designs ranging from tens of kHz to hundreds of kHz.
4. High-threshold design: Vth > 4 V. Compared to low-threshold SiC devices, this offers a lower risk of false turn-on and greater system reliability in scenarios where negative drive voltages are absent or noise interference is present.

 

3. Typical Application Scenarios for the IMZ120R045M1
- New energy photovoltaic inverters, string-type MPC converters
- Commercial and industrial energy storage PCS, bidirectional DC-DC converters
- DC fast-charging stations, high-power conversion units for on-board chargers (OBC)
- Industrial servo drives, three-phase two-level inverters
- Uninterruptible power supplies (UPS), high-voltage industrial power supplies, high-voltage charging power supplies

 

آخرین اخبار شرکت Infineon IMZ120R045M1 CoolSiC™ 1200V 45mΩ SiC Trench MOSFET Transistor  0

 

II. IMZ120R045M1 Buyer’s Selection and Usage Guide
1. Pre-selection Checklist
The first step is to confirm the project type: for stock maintenance and replenishment, the IMZ120R045M1 may be selected; for new project design, alternative components should be assessed as a priority to avoid the risk of supply disruption or discontinuation.
- Voltage margin: It is recommended that the DC bus voltage be kept below 800 V, allowing sufficient margin for surges and spikes; 1200 V devices are not recommended for long-term operation close to their voltage withstand limit.
- Current verification: 52A is the rated current at 25°C; as junction temperature rises, Rds(on) increases and derating continues. For continuous operating current, a derating factor of 0.5 to 0.7 times is recommended, with additional margin reserved for short-circuit and surge conditions.
- Switching frequency matching: This model has a low Qgd and is suitable for the 20 kHz to 100 kHz range; for high-frequency applications above 100 kHz, it is recommended to select a SiC model with a lower Qg.
- Driver scheme matching: The classic SiC driver scheme of +15 V/-5 V is recommended; whilst operation is possible using a 0 V turn-off scheme, this offers poor immunity to interference; in high-noise industrial environments, negative-voltage turn-off is preferred.
- Thermal design verification: With an RthJC of just 0.66 K/W, thermal design should focus on the interface between the package and the heat sink; use thermal pads and ensure correct tightening torque to prevent junction temperature from exceeding specifications.

 

2. Key Points for Risk Mitigation
1. Distinguish between TO247-3 and TO247-4 packages: The IMZ120R045M1 is a 4-pin Kelvin package and cannot be directly substituted with a standard 3-pin TO247 pin-compatible device. The PCB drive circuit must provide a separate Kelvin source output; otherwise, severe high-frequency oscillation will occur.
2. SiC gates are sensitive and highly susceptible to ESD damage; strict ESD protection must be maintained during sample testing and production assembly.
3. Whilst body diodes may be used, under conditions of prolonged continuous conduction during reflow, it is recommended to evaluate the forward loss of the diode and, where necessary, incorporate an external SiC Schottky diode to share the stress.
4. When procuring, verify that the complete part number suffix is IMZ120R045M1XKSA1; distinguish between different suffixes to avoid mistakenly selecting components from the same series but with different packaging or grading levels.

 

3. Guidelines for Alternative Selection
- Compatible replacement with identical specifications: Prioritise Infineon’s IMW120R045M1, as its parameters are similar and its availability is more favourable;
- For lower losses and next-generation process technology: CoolSiC G2/G3 1200V 45mΩ-class models;
- Cost-priority applications with lower frequencies: Compare with 1200V Si IGBT solutions on the same platform; however, switching losses and high-frequency efficiency will be significantly reduced.

 

III. Mingjiada Electronics’ Product Supply Quality and Delivery Process
Shenzhen Mingjiada Electronics offers dual services for Infineon power semiconductors, including discontinued and scarce models: spot supply and the recycling of obsolete stock. We can source and stock SiC MOSFETs such as the IMZ120R045M1, whilst also recycling customers’ project surplus and obsolete Infineon power devices to meet requirements for R&D samples, small-batch maintenance and production line replenishment.

 

1. Supply Quality Control System
- Sourcing Channels: Officially authorised Infineon distribution channels, factory surplus stock, and compliant overseas sourcing. All incoming materials are accompanied by original manufacturer batch labels, Certificates of Conformity (COC), and RoHS/REACH compliance documentation, enabling batch traceability. For discontinued models, we strictly control the supply chain to prevent the inclusion of refurbished, re-ground or dismantled components.
- Incoming Inspection Process: Upon arrival in the warehouse, materials undergo visual inspection, silkscreen verification and package dimension checks; critical power devices undergo additional electrical spot checks, including VDS withstand voltage, Rds(on), Vth gate threshold and capacitance parameter testing; X-ray inspection is utilised to verify the internal packaging and lead frames of chips, identifying risks of internal cold solder joints or remanufactured and re-sealed components; ESD-sensitive components are handled throughout the entire storage and handling process in an ESD-protected environment.
- Warehouse Management: Discrete power devices are stored in a dedicated ESD-protected warehouse with controlled temperature and humidity; TO247-packaged devices are kept in their original factory tubes to prevent pin oxidation and electrostatic damage; materials are managed by zone, distinguishing between currently produced models, discontinued and scarce items, and recovered obsolete stock, with clear labelling to ensure segregation.
- Quality Commitment: Genuine, original products; defective items will be returned or replaced in accordance with the agreement; third-party test reports can be provided upon customer request to meet the incoming material inspection requirements of industrial and new energy sector clients.

 

2. Standardised Procurement and Delivery Process
1. Submission of Requirements: The customer provides the part number IMZ120R045M1, required quantity, intended use (prototype / maintenance or mass production), delivery deadline requirements, and whether a supporting test report is required; The entire BOM may be submitted simultaneously; technical engineers will assist in verifying alternative solutions and alerting to the risk of discontinued products.
2. Stock and Quotation: The sales team will swiftly verify stock levels at our Shenzhen and Hong Kong warehouses, as well as through overseas sourcing channels, and provide feedback on stock availability, lead times and quotations within one hour; the status of the materials (in stock / to be sourced / discontinued) will be clearly indicated, and any supply limitations regarding discontinued models will be proactively communicated.
3. Order Confirmation: Both parties confirm prices, lead times, quality inspection requirements and delivery terms, and sign a purchase and sale contract; we support sample orders and small batches starting from a single unit, as well as bulk maintenance and repair orders, and VMI consignment stockholding.
4. Quality Inspection and Dispatch: Once the order is confirmed, the quality inspection department carries out a re-inspection; packaging utilises anti-static and cushioning protection, with power devices reinforced separately to prevent pin deformation during transit.
5. Logistics and Delivery: Domestic stock is typically dispatched within 48 hours; urgent samples can be arranged for same-day express delivery. For stock held in our Hong Kong warehouse and overseas sources, we provide a one-stop customs clearance service with full tracking of consignment numbers; we support domestic courier services as well as cross-border delivery via DHL and FedEx.
6. After-sales Technical Support: Following delivery, we provide datasheets, driver references and application recommendations; in the event of device malfunctions during operation, we will collaborate on technical analysis and simultaneously provide references for Infineon SiC drivers and thermal management solutions.

 

3. Complementary Value-added Services (Applicable to this model)
- Obsolete Stock Buyback: We simultaneously purchase surplus Infineon CoolSiC series MOSFETs and IGBT power devices held by customers, including end-of-line stock of the IMZ120R045M1. We assess condition, batch and packaging before quoting a buyback price, thereby freeing up inventory capital.
- Technical Support: We assist with the debugging of SiC driver circuits, provide thermal design recommendations and EMI optimisation solutions, and offer PCB layout references for Kelvin pins.
- Long-Term Stocking: To meet the maintenance and repair needs of equipment manufacturers with existing installations, we can secure long-term quotas for scarce, end-of-life SiC models, ensuring a stable supply of after-sales spare parts for many years.

 

IV. Summary
The IMZ120R045M1 is Infineon’s first-generation, flagship 1200V/45mΩ power device in the CoolSiC™ trench series. Leveraging the Kelvin TO247-4 package, low switching losses and high threshold immunity to interference, it has a proven track record in the photovoltaic, energy storage and industrial drive sectors. Relying on its global component sourcing network, Mingjiada Electronics can meet the requirements for sample testing, maintenance and restocking of this model. At the same time, through a comprehensive incoming inspection and batch traceability system, it manages quality risks associated with discontinued parts, whilst balancing spot supply with the recycling of obsolete components to meet the full-cycle supply chain needs of power supply customers.

میخانه زمان : 2026-11-05 12:02:15 >> لیست اخبار
اطلاعات تماس
ShenZhen Mingjiada Electronics Co.,Ltd.

تماس با شخص: Mr. Sales Manager

تلفن: 86-13410018555

فکس: 86-0755-83957753

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